ZTX605STZ

ZTX605STZ
Single BJT Transistors
Diodes Incorporated
NPN - Darlingto
-
E-Line-3, Formed Leads
YES
ZTX605STZ
ZTX605STZ
Single BJT Transistors
Diodes Incorporated
NPN - Darlingto
-
E-Line-3, Formed Leads
YES
TYPEDESCRIPTION
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 120V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX605
Pin Count 3
Reference Standard CECC
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 1V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 1A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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原装库存Bom 单价格实惠


: 0.306448

1

0.306448

0.306448

10

0.2908

2.908

100

0.266038

26.6038

500

0.252111

126.0555

1000

0.238973

238.973

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