IKW75N65ET7XKSA1

IKW75N65ET7XKSA1
IGBTs
Infineon
650 V 80 A 435
-
Tube
100
-
IKW75N65ET7XKSA1
IKW75N65ET7XKSA1
IGBTs
Infineon
650 V 80 A 435
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:80A
Power Dissipation-Tot:333W
Gate - Emitter Voltage:±20V
Pulsed Collector Current:225A
Collector - Emitter Saturation Voltage:1.65V
Turn-on Delay Time:28ns
Turn-off Delay Time:310ns
Qg Gate Charge:435nC
Reverse Recovery Time-Max:100ns
Input Capacitance:4460pF
Operating Temp Range:-40°C to +175°C
Package Style: PG-TO-247
Mounting Method:Surface Mount
: 121.4808
: 100

30

121.4808

3644.424

90

103.8605

9347.445

150

101.9993

15299.895

300

99.5616

29868.48

600

97.1239

58274.34

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