NGTB35N65FL2WG

NGTB35N65FL2WG
IGBTs
onsemi
NGTB35N65: 650
-
Tube
100
-
NGTB35N65FL2WG
NGTB35N65FL2WG
IGBTs
onsemi
NGTB35N65: 650
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:70A
Power Dissipation-Tot:300W
Gate - Emitter Voltage:±20V
Pulsed Collector Current:120A
Collector - Emitter Saturation Voltage:2.2V
Turn-on Delay Time:72ns
Turn-off Delay Time:132ns
Qg Gate Charge:125nC
Reverse Recovery Time-Max:68ns
Leakage Current:200nA
Input Capacitance:3115pF
Thermal Resistance:0.5°C/W
Operating Temp Range:-55°C to +175°C
Package Style: TO-247-3
Mounting Method:Through Hole
: 60.7403
: 100

30

60.7403

1822.209

120

47.7022

5724.264

300

45.5577

13667.31

750

43.4033

32552.475

1200

42.402

50882.4

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