NGTB40N65FL2WG

NGTB40N65FL2WG
IGBTs
onsemi
NGTB40N65: 650
-
Tube
100
-
NGTB40N65FL2WG
NGTB40N65FL2WG
IGBTs
onsemi
NGTB40N65: 650
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:80A
Power Dissipation-Tot:366W
Gate - Emitter Voltage:±20V
Pulsed Collector Current:160A
Collector - Emitter Saturation Voltage:2.1V
Turn-on Delay Time:84ns
Turn-off Delay Time:177ns
Qg Gate Charge:170nC
Reverse Recovery Time-Max:72ns
Leakage Current:200nA
Input Capacitance:4060pF
Thermal Resistance:0.41°C/W
Operating Temp Range:-55°C to +175°C
Package Style: TO-247-3
Mounting Method:Through Hole
: 60.1639
: 100

30

60.1639

1804.917

90

52.2844

4705.596

300

50.2815

15084.45

600

49.1385

29483.1

1200

48.1371

57764.52

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