NGTB50N65FL2WG

NGTB50N65FL2WG
IGBTs
onsemi
650 V 100 A Thr
-
Tube
100
-
NGTB50N65FL2WG
NGTB50N65FL2WG
IGBTs
onsemi
650 V 100 A Thr
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:100A
Power Dissipation-Tot:417W
Gate - Emitter Voltage:20V
Pulsed Collector Current:200A
Collector - Emitter Saturation Voltage:1.8V
Turn-on Delay Time:100ns
Turn-off Delay Time:237ns
Qg Gate Charge:220nC
Reverse Recovery Time-Max:94ns
Leakage Current:200nA
Input Capacitance:5328pF
Thermal Resistance:40°C/W
Operating Temp Range:-55°C to +175°C
No of Terminals:3
Package Style: TO-247-3
Mounting Method:Through Hole
: 74.6384
: 100

30

74.6384

2239.152

90

64.4627

5801.643

150

63.3197

9497.955

600

60.5988

36359.28

900

59.739

53765.1

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