NXH35C120L2C2ESG

NXH35C120L2C2ESG
IGBTs
onsemi
NXH35C120L2C Se
-
Tube
100
-
NXH35C120L2C2ESG
NXH35C120L2C2ESG
IGBTs
onsemi
NXH35C120L2C Se
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:1200V
Collector Current @ 25C:35A
Power Dissipation-Tot:20mW
Gate - Emitter Voltage:20V
Pulsed Collector Current:105A
Collector - Emitter Saturation Voltage:1.8V
Turn-on Delay Time:104ns
Turn-off Delay Time:277ns
Qg Gate Charge:360nC
Reverse Recovery Time-Max:224ns
Leakage Current:400nA
Input Capacitance:8333pF
Thermal Resistance:0.83°C/W
Operating Temp Range:-40°C to +150°C
Package Style: DIP-26
Mounting Method:Through Hole
: 1361.2217
: 100

1

1361.2217

1361.2217

4

1251.7777

5007.1108

10

1184.3007

11843.007

25

1120.4045

28010.1125

40

1089.038

43561.52

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