NXH50C120L2C2ESG

NXH50C120L2C2ESG
IGBTs
onsemi
NXH50C120L2C Se
-
Tube
100
-
NXH50C120L2C2ESG
NXH50C120L2C2ESG
IGBTs
onsemi
NXH50C120L2C Se
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:1200V
Collector Current @ 25C:50A
Power Dissipation-Tot:20W
Gate - Emitter Voltage:20V
Pulsed Collector Current:150A
Collector - Emitter Saturation Voltage:1.8V
Turn-on Delay Time:144ns
Turn-off Delay Time:380ns
Qg Gate Charge:558nC
Reverse Recovery Time-Max:224ns
Leakage Current:400nA
Input Capacitance:11897pF
Thermal Resistance:0.26°C/W
Operating Temp Range:-40°C to +150°C
Package Style: DIP-26
Mounting Method:Through Hole
: 1339.7374
: 100

1

1339.7374

1339.7374

4

1232.0029

4928.0116

10

1165.5374

11655.374

25

1102.7842

27569.605

40

1071.8425

42873.7

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