STGF10M65DF2

STGF10M65DF2
IGBTs
STMicroelectronics
STGF10M65DF2 Se
-
Tube
100
-
STGF10M65DF2
STGF10M65DF2
IGBTs
STMicroelectronics
STGF10M65DF2 Se
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:20A
Power Dissipation-Tot:30W
Gate - Emitter Voltage:20V
Pulsed Collector Current:40A
Collector - Emitter Saturation Voltage:1.8V
Turn-on Delay Time:19ns
Turn-off Delay Time:91ns
Qg Gate Charge:28nC
Reverse Recovery Time-Max:96ns
Leakage Current:250µA
Input Capacitance:840pF
Thermal Resistance:62.5°C/W
Operating Temp Range:-55°C to +175°C
No of Terminals:3
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
: 13.2556
: 100

1000

13.2556

13255.6

2000

10.818

21636

3000

10.6763

32028.9

4000

10.6005

42402

captcha

13723477211

2145630@qq.com
0