STGF30M65DF2

STGF30M65DF2
IGBTs
STMicroelectronics
STGF30M65DF2: 6
-
Tube
100
-
STGF30M65DF2
STGF30M65DF2
IGBTs
STMicroelectronics
STGF30M65DF2: 6
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:60A
Power Dissipation-Tot:38W
Gate - Emitter Voltage:±20V
Pulsed Collector Current:120A
Collector - Emitter Saturation Voltage:1.55V
Turn-on Delay Time:31.6ns
Turn-off Delay Time:115ns
Qg Gate Charge:80nC
Reverse Recovery Time-Max:140ns
Leakage Current:250µA
Input Capacitance:2490pF
Thermal Resistance:62.5°C/W
Operating Temp Range:-55°C to +175°C
No of Terminals:3
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
: 26.9361
: 100

1000

26.9361

26936.1

2000

21.7776

43555.2

3000

21.4843

64452.9

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