STGW25H120DF2

STGW25H120DF2
IGBTs
STMicroelectronics
H Series 1.2 kV
-
Tube
100
-
STGW25H120DF2
STGW25H120DF2
IGBTs
STMicroelectronics
H Series 1.2 kV
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:1200V
Collector Current @ 25C:50A
Power Dissipation-Tot:375W
Gate - Emitter Voltage:20V
Pulsed Collector Current:100A
Collector - Emitter Saturation Voltage:2.1V
Turn-on Delay Time:29ns
Turn-off Delay Time:130ns
Qg Gate Charge:100nC
Reverse Recovery Time-Max:303ns
Leakage Current:250nA
Input Capacitance:2010pF
Thermal Resistance:50°C/W
Operating Temp Range:-55°C to +175°C
No of Terminals:3
Package Style: TO-247-3
Mounting Method:Through Hole
: 110.1621
: 100

1

110.1621

110.1621

10

101.1395

1011.395

40

95.9809

3839.236

125

91.9754

11496.925

400

88.1014

35240.56

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