STGW40H65DFB

STGW40H65DFB
IGBTs
STMicroelectronics
HB Series 650 V
-
Tube
100
-
STGW40H65DFB
STGW40H65DFB
IGBTs
STMicroelectronics
HB Series 650 V
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:80A
Power Dissipation-Tot:283W
Gate - Emitter Voltage:20V
Pulsed Collector Current:160A
Collector - Emitter Saturation Voltage:1.6V
Turn-on Delay Time:40ns
Turn-off Delay Time:142ns
Qg Gate Charge:210nC
Reverse Recovery Time-Max:62ns
Leakage Current:250nA
Input Capacitance:5412pF
Thermal Resistance:50°C/W
Operating Temp Range:-55°C to +175°C
No of Terminals:3
Package Style: TO-247-3
Mounting Method:Through Hole
: 47.419
: 100

30

47.419

1422.57

120

40.824

4898.88

300

39.681

11904.3

750

38.538

28903.5

1200

37.9615

45553.8

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