STGWT40H65DFB

STGWT40H65DFB
IGBTs
STMicroelectronics
STGWT40 Series
-
Tube
100
-
STGWT40H65DFB
STGWT40H65DFB
IGBTs
STMicroelectronics
STGWT40 Series
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:80A
Power Dissipation-Tot:283W
Gate - Emitter Voltage:20V
Pulsed Collector Current:160A
Collector - Emitter Saturation Voltage:1.6V
Turn-on Delay Time:40ns
Turn-off Delay Time:142ns
Qg Gate Charge:210nC
Reverse Recovery Time-Max:62ns
Leakage Current:250nA
Input Capacitance:5412pF
Thermal Resistance:50°C/W
Operating Temp Range:-55°C to +175°C
No of Terminals:3
Package Style: TO-3P
Mounting Method:Through Hole
: 47.419
: 100

20

47.419

948.38

80

41.1173

3289.384

300

39.3978

11819.34

500

38.8213

19410.65

1000

37.9615

37961.5

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