STGWT60H65DFB

STGWT60H65DFB
IGBTs
STMicroelectronics
STGWT60H65DFB S
-
Tube
100
-
STGWT60H65DFB
STGWT60H65DFB
IGBTs
STMicroelectronics
STGWT60H65DFB S
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:80A
Power Dissipation-Tot:375W
Gate - Emitter Voltage:20V
Pulsed Collector Current:240A
Collector - Emitter Saturation Voltage:1.6V
Turn-on Delay Time:66ns
Turn-off Delay Time:210ns
Qg Gate Charge:306nC
Reverse Recovery Time-Max:60ns
Leakage Current:250nA
Input Capacitance:7792pF
Thermal Resistance:50°C/W
Operating Temp Range:-55°C to +175°C
No of Terminals:3
Package Style: TO-3P
Mounting Method:Through Hole
: 48.4204
: 100

30

48.4204

1452.612

90

41.977

3777.93

300

40.3992

12119.76

600

39.5394

23723.64

1200

38.6796

46415.52

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