STGWT60H65FB

STGWT60H65FB
IGBTs
STMicroelectronics
HB Series 650 V
-
Tube
100
-
STGWT60H65FB
STGWT60H65FB
IGBTs
STMicroelectronics
HB Series 650 V
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:80A
Power Dissipation-Tot:375W
Gate - Emitter Voltage:20V
Pulsed Collector Current:240A
Collector - Emitter Saturation Voltage:1.6V
Turn-on Delay Time:66ns
Turn-off Delay Time:210ns
Qg Gate Charge:306nC
Leakage Current:250nA
Input Capacitance:7792pF
Thermal Resistance:50°C/W
Operating Temp Range:-55°C to +175°C
No of Terminals:3
Package Style: TO-3P
Mounting Method:Through Hole
: 48.9968
: 100

30

48.9968

1469.904

90

42.5436

3828.924

300

40.9757

12292.71

600

40.1159

24069.54

1200

39.2562

47107.44

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