STGWT80H65DFB

STGWT80H65DFB
IGBTs
STMicroelectronics
HB Series 650 V
-
Tube
100
-
STGWT80H65DFB
STGWT80H65DFB
IGBTs
STMicroelectronics
HB Series 650 V
-
Tube
100
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:120A
Power Dissipation-Tot:469W
Gate - Emitter Voltage:20V
Pulsed Collector Current:300A
Collector - Emitter Saturation Voltage:1.6V
Turn-on Delay Time:84ns
Turn-off Delay Time:280ns
Qg Gate Charge:414nC
Reverse Recovery Time-Max:85ns
Leakage Current:250nA
Input Capacitance:10524pF
Thermal Resistance:50°C/W
Operating Temp Range:-55°C to +175°C
No of Terminals:3
Package Style: TO-3P
Mounting Method:Through Hole
: 75.6397
: 100

30

75.6397

2269.191

90

65.1809

5866.281

150

64.1794

9626.91

600

61.3169

36790.14

900

60.4572

54411.48

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