TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 29mΩ |
Rated Power Dissipation: | 1W |
Qg Gate Charge: | 7.7nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 7.6A |
Turn-on Delay Time: | 9ns |
Turn-off Delay Time: | 23ns |
Rise Time: | 5ns |
Fall Time: | 3ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.9V |
Technology: | PowerTrench |
Input Capacitance: | 760pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
13.5388
33847
5000
10.818
54090