TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 8mΩ |
Rated Power Dissipation: | 200W |
Qg Gate Charge: | 146nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 110A |
Turn-on Delay Time: | 14ns |
Turn-off Delay Time: | 50ns |
Rise Time: | 101ns |
Fall Time: | 65ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 4.83mm |
Length: | 10.67mm |
Input Capacitance: | 3247pF |
Package Style: | TO-220-3 (TO-220AB) |
1
17.7619
17.7619
40
15.9007
636.028
150
15.3242
2298.63
500
14.7577
7378.85
2000
14.1812
28362.4