TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.02Ω |
Rated Power Dissipation: | 200W |
Qg Gate Charge: | 180nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 74A |
Turn-on Delay Time: | 18ns |
Turn-off Delay Time: | 61ns |
Rise Time: | 99ns |
Fall Time: | 96ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 8.77mm |
Length: | 10.54mm |
Input Capacitance: | 3400pF |
Package Style: | TO-220-3 (TO-220AB) |
1
29.7987
29.7987
40
26.5012
1060.048
125
25.6414
3205.175
400
24.6401
9856.04
1250
23.7803
29725.375