| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 155mΩ |
| Rated Power Dissipation: | 79W |
| Qg Gate Charge: | 34nC |
| Gate-Source Voltage-Max [Vgss]: | 16V |
| Drain Current: | 17A |
| Turn-on Delay Time: | 7.2ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 53ns |
| Fall Time: | 26ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2V |
| Technology: | Advanced Process Technology |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 800pF |
| Package Style: | TO-252AA |
| Mounting Method: | Surface Mount |
2000
12.5374
25074.8
4000
10.0997
40398.8
6000
10.0239
60143.4
