| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 12mΩ |
| Rated Power Dissipation: | 130W |
| Qg Gate Charge: | 66nC |
| Gate-Source Voltage-Max [Vgss]: | 16V |
| Drain Current: | 89A |
| Turn-on Delay Time: | 17ns |
| Turn-off Delay Time: | 33ns |
| Rise Time: | 150ns |
| Fall Time: | 70ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | Advanced Process Technology |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 2900pF |
| Package Style: | TO-252AA |
| Mounting Method: | Surface Mount |
2000
17.9036
35807.2
