TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 32mΩ |
Rated Power Dissipation: | 490mW |
Qg Gate Charge: | 6.2nC |
Gate-Source Voltage-Max [Vgss]: | 12V |
Drain Current: | 4.2A |
Turn-on Delay Time: | 7ns |
Turn-off Delay Time: | 35ns |
Rise Time: | 26ns |
Fall Time: | 10ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 0.65V |
Technology: | Si |
Input Capacitance: | 655pF |
Package Style: | SOT-23 (SC-59,TO-236) |
Mounting Method: | Surface Mount |
3000
1.4607
4382.1
9000
1.216
10944
12000
1.2024
14428.8
30000
1.1809
35427
45000
1.1759
52915.5