| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 950V |
| Drain-Source On Resistance-Max: | 1.25Ω |
| Rated Power Dissipation: | 90W |
| Qg Gate Charge: | 13nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 9A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 33ns |
| Rise Time: | 12ns |
| Fall Time: | 21ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Input Capacitance: | 450pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
50
18.48
924
200
16.0423
3208.46
750
15.4759
11606.925
1500
15.1826
22773.9
3750
14.7577
55341.375
