SI9945BDY-T1-GE3

SI9945BDY-T1-GE3
MOSFETs Transistors Arrays
Vishay Siliconix
SI9945BDY-T1-GE
-
8-SOIC (0.154, 3.90mm Width)
YES
SI9945BDY-T1-GE3
SI9945BDY-T1-GE3
MOSFETs Transistors Arrays
Vishay Siliconix
SI9945BDY-T1-GE
-
8-SOIC (0.154, 3.90mm Width)
YES
TYPEDESCRIPTION
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 58mOhm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 3.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI9945
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Turn On Delay Time 10 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 15ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 4.3A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.3A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 2.5 V
Height 1.75mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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