NGTB50N65FL2WG

NGTB50N65FL2WG
IGBTs
onsemi
650 V 100 A Thr
-
Tube
-
NGTB50N65FL2WG
NGTB50N65FL2WG
IGBTs
onsemi
650 V 100 A Thr
-
Tube
-
PDF(1)
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:100A
Power Dissipation-Tot:417W
Gate - Emitter Voltage:20V
Pulsed Collector Current:200A
Collector - Emitter Saturation Voltage:1.8V
Turn-on Delay Time:100ns
Turn-off Delay Time:237ns
Qg Gate Charge:220nC
Reverse Recovery Time-Max:94ns
Leakage Current:200nA
Input Capacitance:5328pF
Thermal Resistance:40°C/W
Operating Temp Range:-55°C to +175°C
No of Terminals:3
Package Style: TO-247-3
Mounting Method:Through Hole
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Original stockBom DistributioAffordable Price


: 41.0484

30

41.0484

1231.452

90

35.4527

3190.743

150

34.8297

5224.455

600

33.3288

19997.28

900

32.859

29573.1

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