NXH35C120L2C2ESG

NXH35C120L2C2ESG
IGBTs
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NXH35C120L2C Se
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NXH35C120L2C2ESG
NXH35C120L2C2ESG
IGBTs
onsemi
NXH35C120L2C Se
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Tube
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TYPEDESCRIPTION
CE Voltage-Max:1200V
Collector Current @ 25C:35A
Power Dissipation-Tot:20mW
Gate - Emitter Voltage:20V
Pulsed Collector Current:105A
Collector - Emitter Saturation Voltage:1.8V
Turn-on Delay Time:104ns
Turn-off Delay Time:277ns
Qg Gate Charge:360nC
Reverse Recovery Time-Max:224ns
Leakage Current:400nA
Input Capacitance:8333pF
Thermal Resistance:0.83°C/W
Operating Temp Range:-40°C to +150°C
Package Style: DIP-26
Mounting Method:Through Hole
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 Orignal genuine       Each chip comes from the original factory


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Original stockBom DistributioAffordable Price


: 748.6717

1

748.6717

748.6717

4

688.4777

2753.9108

10

651.3707

6513.707

25

616.2245

15405.6125

40

598.968

23958.72

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