STGB19NC60WT4

STGB19NC60WT4
Single IGBTs
STMicroelectronics
STGB19NC60WT4 d
-
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
YES
STGB19NC60WT4
STGB19NC60WT4
Single IGBTs
STMicroelectronics
STGB19NC60WT4 d
-
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - annealed
Max Power Dissipation 130W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Base Part Number STGB19
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 130W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 33 ns
Test Condition 390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Turn Off Time-Nom (toff) 204 ns
Gate Charge 53nC
Td (on/off) @ 25°C 25ns/90ns
Switching Energy 81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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